T=0 Phase Diagram of the Double-Exchange Model

We present the T=0 phase diagram of the double-exchange model (ferromagnetic Kondo lattice model) for all values of the carrier concentration $n$ and Hund's couplng $J$, within dynamical mean field theory. We find that depending on the values of $n$ and $J$, the ground state is either a ferromagnet, a commensurate antiferromagnet or some other incommensurate phase with intermediate wave vectors . The antiferromagnetic phase is separated by first order phase boundaries and wide regimes of phase separation. The transition from the ferromagnetic phase to an incommensurate phase is second order.Comment: 4 pages, 5 figures. The analysis now includes incommensurate phases with arbitrary wave vectors. Correspondingly, the figures have been change

Near optimal configurations in mean field disordered systems

We present a general technique to compute how the energy of a configuration varies as a function of its overlap with the ground state in the case of optimization problems. Our approach is based on a generalization of the cavity method to a system interacting with its ground state. With this technique we study the random matching problem as well as the mean field diluted spin glass. As a byproduct of this approach we calculate the de Almeida-Thouless transition line of the spin glass on a fixed connectivity random graph.Comment: 13 pages, 7 figure

Fictive Impurity Models: an Alternative Formulation of the Cluster Dynamical Mean Field Method

"Cluster" extensions of the dynamical mean field method to include longer range correlations are discussed. It is argued that the clusters arising in these methods are naturally interpreted not as actual subunits of a physical lattice but as algorithms for computing coefficients in an orthogonal function expansion of the momentum dependence of the electronic self-energy. The difficulties with causality which have been found to plague cluster dynamical mean field methods are shown to be related to the "ringing" phenomenon familiar from Fourier analysis. The analogy is used to motivate proposals for simple filtering methods to circumvent them. The formalism is tested by comparison to low order perturbative calculations and self consistent solutions

The beta-Secretase Substrate Seizure 6-Like Protein (SEZ6L) Controls Motor Functions in Mice

The membrane protein seizure 6–like (SEZ6L) is a neuronal substrate of the Alzheimer’s disease protease BACE1, and little is known about its physiological function in the nervous system. Here, we show that SEZ6L constitutive knockout mice display motor phenotypes in adulthood, including changes in gait and decreased motor coordination. Additionally, SEZ6L knockout mice displayed increased anxiety-like behaviour, although spatial learning and memory in the Morris water maze were normal. Analysis of the gross anatomy and proteome of the adult SEZ6L knockout cerebellum did not reveal any major differences compared to wild type, indicating that lack of SEZ6L in other regions of the nervous system may contribute to the phenotypes observed. In summary, our study establishes physiological functions for SEZ6L in regulating motor coordination and curbing anxiety-related behaviour, indicating that aberrant SEZ6L function in the human nervous system may contribute to movement disorders and neuropsychiatric diseases

Quantum impurity solvers using a slave rotor representation

We introduce a representation of electron operators as a product of a spin-carry ing fermion and of a phase variable dual to the total charge (slave quantum rotor). Based on this representation, a new method is proposed for solving multi-orbital Anderson quantum impurity models at finite interaction strength U. It consists in a set of coupled integral equations for the auxiliary field Green's functions, which can be derived from a controlled saddle-point in the limit of a large number of field components. In contrast to some finite-U extensions of the non-crossing approximation, the new method provides a smooth interpolation between the atomic limit and the weak-coupling limit, and does not display violation of causality at low-frequency. We demonstrate that this impurity solver can be applied in the context of Dynamical Mean-Field Theory, at or close to half-filling. Good agreement with established results on the Mott transition is found, and large values of the orbital degeneracy can be investigated at low computational cost.Comment: 18 pages, 15 figure

Dynamical mean field theory for transition temperature and optics of CMR manganites

A tight binding parametrization of local spin density functional band theory is combined with a dynamical mean field treatment of correlations to obtain a theory of the magnetic transition temperature, optical conductivity and T=0 spinwave stiffness of a minimal model for the pseudocubic metallic $CMR$ manganites such a $La_{1-X}Sr_{x}MnO_{3}$. The results indicate that previous estimates of $T_{c}$ obtained by one of us (Phys. Rev. \textbf{B61} 10738-49 (2000)) are in error, that in fact the materials are characterized by Hunds coupling $J\approx 1.5eV$, and that magnetic-order driven changes in the kinetic energy may not be the cause of the observed 'colossal' magnetoresistive and multiphase behavior in the manganites, raising questions about our present understanding of these materials.Comment: Published version; 10 pages, 9 figure

Process Modules for GeSn Nanoelectronics with high Sn-contents

This paper systematically studies GeSn n-FETs, from individual process modules to a complete device. High-k gate stacks and NiGeSn metallic contacts for source and drain are characterized in independent experiments. To study both direct and indirect bandgap semiconductors, a range of 0 at.% to 14.5 at.% Sn-content GeSn alloys are investigated. Special emphasis is placed on capacitance-voltage (C-V) characteristics and Schottky-barrier optimization. GeSn n-FET devices are presented including temperature dependent I-V characteristics. Finally, as an important step towards implementing GeSn in tunnel-FETs, negative differential resistance in Ge0.87Sn0.13 tunnel-diodes is demonstrated at cryogenic temperatures. The present work provides a base for further optimization of GeSn FETs and novel tunnel FET devices